Abstract:Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/Al/Si(111) wafers by radio frequency (RF) magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM). The results show that when the flow ratio of nitrogen and argon is 2:18, the cubic BN (c-BN) film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4:20, the hexagonal BN (h-BN) film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribution than the c-BN films.

Abstract:ZnO:Cu/ZnO core/shell nanocrystals are synthesized by a two-step solution-phase process. The morphology, structure and optical properties of the samples are detected by scanning electron microscopy, Raman, absorption and luminescence spectroscopy. The increase of particle size confirms the growth of ZnO shell. The segregation of CuO phase observed in ZnO: Cu core is not detected in ZnO:Cu/ZnO core/shell nanocrystals from Raman spectra. It is suggested that some Cu ions can be segregated from ZnO nanocrystals, and the separated Cu ions can be incorporated inside ZnO shell after the growth of ZnO shell. The visible emission mechanism is discussed in detail, and the photoluminescence analysis indicates that the core/shell structure helps to eliminate the surface-related emission.

Abstract:The preparation of aluminum nitrogen (AlN) film without Al texture is of great significance for the manufacture of high-performance surface acoustic wave (SAW) device. We research the process factors which bring Al into AlN film due to radio frequency (RF) magnetron sputtering system, and discuss how the process parameters influence the AlN thin film containing Al. In the research, it is found that the high sputtering power, the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation, and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.

Abstract:In order to reduce the noises affixed to the signals when testing high frequency devices,a single-port test mode(S11) is used to test frequency response of high frequency(GHz) and dual-port surface acoustic wave devices(SAWDs) in this paper.The feasibility of the test is proved by simulating the Fabry-perot model.The frequency response of the high-frequency dual-port resonant-type diamond SAWD is measured by S11 and the dual-port test mode(S21),respectively.The results show that the quality fact...