2009, 5(6):409-412.
Abstract:
Pentacene-based organic field effect transistors (OFETs) are fabricated using poly(methyl methacrylate) (PMMA) and polyimide
(PI) as gate dielectrics, respectively. The fabricated OFETs exhibit reasonable device characteristics. The field-effect mobility,
threshold voltage, and on/off current radio are determined to be 3.214 × 10−2 cm2/Vs, −28 V, and 1 ×103 respectively for OFETs with PMMA as gate dielectrics, and 7.306×10−3cm2/Vs, −21 V, and 2 ×102 for OFETs with PI. Furthermore, the dielectric properties of gate insulator layer are tested and the dipole effect at the
semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.