Study on the Gas Field Characteristics of Semiconductor Bridge (SCB)? Plasma Using Laser Interferometry Renbao Wang, Guojun Zhou, Qiushi Ma, Shunguan Zhu

Abstract:

The semiconductor bridge (SCB) ignites through bridge film discharge, offering advantages such as low ignition energy, high safety, and compatibility with digital logic circuits. The study uses laser interferometry to investigate the gas dynamics of the bridge film after SCB plasma extinction. Interferometric images of the SCB bridge film gas were obtained through a laser interferometry optical path. After the degradation model of digital image processing, clearer images were produced to facilitate analysis and calculation. The results show that the gas temperature at the center of the SCB bridge film reaches a maximum of 1000 K, and the temperature rapidly decreases along the axial direction of the bridge surface to room temperature at 300 K. The maximum diffusion velocity of the plasma is 1.8 km/s. These findings provide critical insights for SCB bridge design and ignition control.

Key words:Laser interferometry; Semiconductor bridges (SCB)? plasma; Gas field; Temperature; Diffusion velocity