Charatererization of High-Performance AlGaN-Based Solar-Blind UV Photodetectors
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1.College of Physics and Electronic Science, Hunan University of Science and Technology;2.National Space Science Centre, Chinese Academy of Sciences;3.Institute of Semiconductors, Chinese Academy of Sciences

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‘Climbing Plan’ of the National Space Science Centre of the Chinese Academy of Sciences,andthe National Engineering Research Centre for Mobile Private Networks Project

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    Abstract:

    This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind UV photodetectors.Based on the photodetectors, a low-noise, high-gain UV detection system circuit is designed and fabricated, enabling the detection, acquisition, and calibration of weak solar-blind UV signals. Experimental results demonstrate that under zero bias conditions, with a UV light power density of 3.45 μW/cm2 at 260 nm, the sample achieves a peak responsivity (R) of 0.085 A/W, an external quantum efficiency (EQE) of 40.7%, and a detectivity (D*) of 7.46?1012 cm?Hz1/2?W-1. The system exhibits a bandpass characteristic within the 240~280 nm wavelength range, coupled with a high signal-to-noise ratio of 39.74 dB.

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History
  • Received:April 26,2024
  • Revised:June 07,2024
  • Adopted:July 03,2024
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