1. National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, China;2. Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou 450001, China;3. Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou 450001, China;4. Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, China;5. School of Electrical and Information Engineering, North Minzu University, Yinchuan 750001, China
SANG Xien, XU Yuan, YIN Mengshuang, WANG Fang, LIOU Juin J, LIU Yuhuai. InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers[J]. Optoelectronics Letters,2024,20(2):89-93
Copy