Home > Archive>Volume 20, Issue 2, 2024 >89-93. DOI:https://doi.org/10.1007/s11801-024-3099-0
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InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers
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1. National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, China;2. Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou 450001, China;3. Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou 450001, China;4. Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, China;5. School of Electrical and Information Engineering, North Minzu University, Yinchuan 750001, China

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    Abstract:

    To improve the internal quantum efficiency (IQE) and light output power of InGaN light-emitting diodes (LEDs), we proposed an In-composition gradient increase and decrease InGaN quantum barrier structure. Through analysis of its P-I graph, carrier concentration, and energy band diagram, the results showed that when the current was 100 mA, the In-composition gradient decrease quantum barrier (QB) structure could effectively suppress electron leakage while improving hole injection efficiency, resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well (QW). As a result, the IQE and output power of the LED were effectively improved.

    Reference
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SANG Xien, XU Yuan, YIN Mengshuang, WANG Fang, LIOU Juin J, LIU Yuhuai. InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers[J]. Optoelectronics Letters,2024,20(2):89-93

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History
  • Received:June 06,2023
  • Revised:August 16,2023
  • Online: January 05,2024
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