LIU Zhaojun
School of Opto-Electronic Engineering, Changchun University of Science & Technology, Changchun 130022, ChinaZHU Lianqing
Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, ChinaLU Lidan
Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, ChinaDONG Mingli
Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, ChinaZHANG Dongliang
Key Laboratory of Optical Fiber Sensing and System, Beijing Information Science & Technology University, Beijing 100016, ChinaZHENG Xiantong
Key Laboratory of Optical Fiber Sensing and System, Beijing Information Science & Technology University, Beijing 100016, China1. School of Opto-Electronic Engineering, Changchun University of Science & Technology, Changchun 130022, China;2. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China;3. Key Laboratory of Optical Fiber Sensing and System, Beijing Information Science & Technology University, Beijing 100016, China
LIU Zhaojun, ZHU Lianqing, LU Lidan, DONG Mingli, ZHANG Dongliang, ZHENG Xiantong. Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier[J]. Optoelectronics Letters,2023,19(10):577-582
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