WANG Ruihu
Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, ChinaBI Jinlian
Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, ChinaLI Wei
Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, ChinaYUAN Yujie
Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, ChinaXING Yupeng
Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, ChinaYAO Liyong
Tianjin Institute of Power Source, Tianjin 300384, China1. Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China;2. Tianjin Institute of Power Source, Tianjin 300384, China
WANG Ruihu, BI Jinlian, LI Wei, YUAN Yujie, XING Yupeng, YAO Liyong. Exploring the growth mechanism of CuSbSe2 thin film prepared by electrodeposition[J]. Optoelectronics Letters,2023,19(9):532-540
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