Archive > Volume 19 Issue 6 > 2023,19(6):347-352. DOI:https://doi.org/10.1007/s11801-023-2004-6 CSTR:[cstr] Prev Next
Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique
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Abstract:
Thin films Bi4Ti3O12 (BLT) were deposited using electron beam evaporation on silicon substrate at several times, also on AlN/Si and SiO2/Si substrates. Thin films morphology and thickness were measured via scanning electron microscopy (SEM). The crystallography was studied using X-ray diffraction (XRD) technique for films which have a (0010) preferred orientation in all substrate types. The capacitance values were contingent on frequency value in C-V measurement. The ferroelectric characterization was investigated for BLT film deposited on isolator layer (SiO2 or AlN) for Al/Bi4Ti3O12/SiO2/Si devices. Memory effect value varied from 1 V to 3 V depending on the thin films isolator on substrate.
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