Simulation and optimization of dopant-free asymmetric heterojunction solar cells
Author:
Affiliation:

1. Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China;2. Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    In order to further study doping-free asymmetric heterojunction (DASH) solar cells, we used AFORS-HET software to optimize the structure of Al/SnO2/a-Si:H (i)/c-Si (p)/a-Si:H (i)/NiOx/Ag. In a certain adjustment range, a series of simulations were carried out on the band gap, electron affinity, thickness and work function (WF) of NiOx, thickness and WF of SnO2, and the thickness of a-Si:H (i). After the above optimization, 21.08% efficiency was obtained at 300 K. This study shows that the solar cells with this structure have good light absorption properties in a very wide spectrum. The present simulation provides instructive suggestions for follow-up experiments of DASH solar cells.

    Reference
    Related
    Cited by
Get Citation

ZHENG Qiaoqiao, YUAN Yujie, HOU Guofu, LI Wei, TAO Ke, PENG Zhuo. Simulation and optimization of dopant-free asymmetric heterojunction solar cells[J]. Optoelectronics Letters,2023,19(6):337-346

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:September 28,2022
  • Revised:November 19,2022
  • Adopted:
  • Online: June 16,2023
  • Published: