Home > Archive>Volume 17, Issue 5, 2021 >302-307. DOI:https://doi.org/10.1007/s11801-021-0108-4
PDF HTML XML Export Cite reminder
Photoluminescence study of the In0.3Ga0.7As surface quantum dots coupling structure
CSTR:
[cstr]
Author:
Affiliation:

1.School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China;2. Instrumental Analysis Center, Henan Polytechnic University, Jiaozuo 454000, China;3. College of Physics Science & Technology, Hebei University, Baoding 071002,China

  • Article
    • | |
  • Metrics
    • |
  • Reference [23]
    • |
  • Related
    • | | |
  • Comments
    Abstract:

    Photoluminescence (PL) was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots (SQDs) structure which consists of one In0.3Ga0.7As SQDs layer being stacked on multi-layers of In0.3Ga0.7As buried quantum dots (BQDs). Accompanied by considering the localized excitons effect induced by interface fluctuation, carrier transition between BQDs and SQDs were analyzed carefully. The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL characteristics between BQDs and SQDs. These results are useful for future application of SQDs as surface sensitive sensors.

    Reference
    [1] Jinkwan Kwoen, Bongyong Jang, Joohang Lee, Takeo Kageyama, Katsuyuki Watanabe and Yasuhiko Arakawa, Optics Express 26, 11568 (2018).
    [2] Qizhu Li, Yuanqing Huang, Jiqiang Ning, Cheng Jiang, Xu Wang, Hongmei Chen, Xiao Li, Ruiying Zhang, Kai Zhang, Jiahua Min, Yong Peng and Ziyang Zhang, Nanoscale Research Letters 13, 267 (2018).
    [3] Dongyoung kim, Sabina Hatch, Jiang Wu, Kimberly A. Sablon, Phu Lam, Pamela Jurczak, Mingchu Tang, William P. Gillin and Huiyun Liu, IEEE Journal of Photovoltaics 8, 741 (2018).
    [4] Yves Bidaux, Ksenia A. Fedorova, Daniil A. Livshits, Edik U. Rafailov and Jerome Faist, IEEE Photonics Technology Letters 29, 2246 (2017).
    [5] Neil S. Beattie, Patrick See, Guillaume Zoppi, Palat M. Ushasree, Martial Duchamp, Ian Farrer, David A. Ritchie and Stanko Tomic, ACS Photonic 4, 2745 (2017).
    [6] Roberta De Angelis, Mauro Casalboni, Liliana D. Amico, Fabio De Matteis, Fariba Hatami, William T. Masselink and Paolo Prosposito, Key Engineering Materials 605, 177 (2014).
    [7] R. De Angelis, L. D’Amicro, M. Casalboni, F. Hatami,
    W. T. Masselink and P. Prosposito, Sensors and Actuators B:Chemical 189, 113 (2013).
    [8] R. De Angelis, M. Casalboni, F. Hatami, A. Ugur, W. T. Masselink and P. Prosposito, Sensors and Actuators B:Chemical B 162, 149 (2012).
    [9] M. J. Milla, J. M. Ulloa and A. Guzman, Applied Physics Letters 100, 131601 (2012).
    [10] Roberta De Angelis, Mauro Casalboni, Fabio De Matteis, Fariba Hatami, William T. Masselink, Hong Zhang and Paolo Prosposito, Journal of Luminescence 168, 54 (2015).
    [11] M. J. Milla, J. M. Ulloa and A. Guzman, Nanotehcnology 25, 445501 (2014).
    [12] B. L. Liang, Zh. M. Wang, Yu. I. Mazur and G. J. Salamo, Applied Physics Letters 89, 243124 (2006).
    [13] B. L. Liang, Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, M. E. Ware and G. J. Salamo, Optics Express 15, 8157 (2007).
    [14] B. L. Liang, Yu I. Mazur, Vas P. Kunets, Zh. M. Wang, G. J. Salamo, E. A. Decuir Jr, B. Passmore and M. O. Manasreh, Nanotechnology 19, 065705 (2008).
    [15] G. Wang, B. L. Liang, B. C. Juang, A. Das, M. C Debnath, D. L. Huffaker, Y. I. Mazur, M. E. Ware and G. J. Salamo, Nanotechnology 27, 465701 (2016).
    [16] Y. Wang, X. Sheng, Q. Guo, X. Li, S. Wang, G. Fu, Y. I. Mazur, Y. Maidaniuk, M. E. Ware, G. J. Salamo, B. L. Liang and D. L. Huffaker, Nanoscale Research Letters 12, 229 (2017).
    [17] L. C. Pocas, E. M. Lopes, J. L. Durate, I. F. Dias, S. A. Lourenco, E. Laureto, M. Valadares, P. S. S. Guimaraes, L. A. Cury and J. C. Harmand, Journal of Applied Physics 97, 103518 (2005).
    [18] Fu Feng, Clementine Symonds, Catherine Schwob, Joel Bellessa, Agnes Maitre, Jean Paul Hugonin and Laurent Coolen, New Journal of Physic 20, 033020 (2018).
    [19] Fu Feng, Willy Daney de Marcillac, Xavier Lafosse, Simone Luca Portalupi, Michel Nasilowski, Benoit Dubertret, Jean Marc Frigerio, Catherine Schwob, Agnes Maitre, Pascale Senellart and Laurent Coolen, New Journal of Physic 20, 083018 (2016).
    [20] Gongdong Wang, Zengguang Liu, Junjun Wang, Yingli Yang, Xiaolian Liu, Xinran Zhang, Liwei Zhang and Guohua Cao, Photonic Sensors 10, 283 (2020).
    [21] Zhu Tian-Wei, Zhang Yuan-Chang, Xu Bo, Liu Feng-Qi and Wang Zhan-Guo, Acta Physica Sinica 52, 2087 (2003). (in Chinese)
    [22] Lu Zhendong, Xu Zhongying, Zheng Baozhen and Xu Jizong, Chinese Journal of Semiconductors 18, 631 (1997).
    Related
    Cited by
    Comments
    Comments
    分享到微博
    Submit
Get Citation

YANG Ying-li, LIU Zeng-guang, WANG Guo-dong, WANG Ying, YUAN Qing, FU Guang-sheng. Photoluminescence study of the In0.3Ga0.7As surface quantum dots coupling structure[J]. Optoelectronics Letters,2021,17(5):302-307

Copy
Share
Article Metrics
  • Abstract:944
  • PDF: 1
  • HTML: 0
  • Cited by: 0
History
  • Received:June 24,2020
  • Revised:August 26,2020
  • Online: May 25,2021
Article QR Code
Phone：86-22-60214471
URL：http://www.oelett.com E-mail：oel@263.net
Supported by:Beijing E-Tiller Technology Development Co., Ltd.
® 2025 All Rights Reserved