Archive > Volume 16 Issue 6 > 2020,16(6):401-404. DOI:https://doi.org/10.1007/s11801-020-9188-9 CSTR:[cstr] Prev Next
Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature
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Abstract:
Cu2NiSnS4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu2NiSnS4 nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu2NiSnS4 nanoparticles were studied at various temperature. The results showed that the Cu2NiSnS4 nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.
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