Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature
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1. Tianjin Research Institute for Water Transport Engineering, Ministry of Transport, Tianjin 300000, China

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    Abstract:

    Cu2NiSnS4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu2NiSnS4 nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu2NiSnS4 nanoparticles were studied at various temperature. The results showed that the Cu2NiSnS4 nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.

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LI Shi-na, MA Rui-xin, NIU Jian-wen. Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature[J]. Optoelectronics Letters,2020,16(6):401-404

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History
  • Received:November 07,2019
  • Revised:March 25,2020
  • Adopted:
  • Online: October 16,2020
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