Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current
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Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics, Tianjin University, Tianjin 300072, China

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    Abstract:

    Using the rate equation, several optical methods of characterizing the threshold of a laser diode (LD) were analyzed. The thresholdsdetermined by all methods are consistent if the spontaneous-emission-coefficient (β) is small. If β>0.05, the thresholds obtained by different methods are different. Especially, for micro-nano LDs with a large β, these methods are starting to become inaccurate. However, the d2S/dI2-I is a relatively accurate method to characterize threshold of these LDs compared to other methods. The effects of the spontaneous-emission-lifetime (τsp) and the photon-lifetime (τp) on thresholds were analyzed. The exact functions between the thresholdand the β, τsp and τp were obtained.

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JIA Kai-ping, ZHANG Liang, FENG Lie-feng. Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current[J]. Optoelectronics Letters,2020,16(2):103-107

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History
  • Received:June 05,2019
  • Revised:July 28,2019
  • Online: May 01,2020
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