Home > Archive>Volume 16, Issue 2, 2020 >87-91. DOI:https://doi.org/10.1007/s11801-020-9093-2
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Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells
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1. National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;2. International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;3. School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China

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    Abstract:

    An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which results in an increased hole injection efficiency and a decreased electron leakage into the p-type region. Particularly, comparisons with the convex quantum barriers structure and the reference structure show that the convex quantum wells structure has the best performance in all respects.

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XING Zhong-qiu, ZHOU Yong-jie, CHEN Xue, Mussaab, I. Niass, WANG Yi-fu, WANG Fang, LIU Yu-huai. Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells[J]. Optoelectronics Letters,2020,16(2):87-91

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History
  • Received:June 12,2019
  • Revised:August 06,2019
  • Online: May 01,2020
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