Archive > Volume 15 Issue 6 > 2019,15(6):411-414. DOI:https://doi.org/10.1007/s11801-019-9024-2 CSTR:[cstr] Prev Next
Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers
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Abstract:
In order to obtain good optical characteristics in the GaN-based vertical-cavity surface-emitting laser (VCSEL), different kinds of AlGaN electron blocking layers (EBL) were introduced. These were inserted coherently near the active region to limit electron leakage into the p-doped side. The research was conducted by photonic integrated circuit simulator in three-dimensional (PICS3D). The simulated results reveal that an EBL can improve the optical characteristics of a VCSEL effectively. All the advantages are due to a reduction in the electron leakage in the quantum wells. While the voltage of the five-layer EBLs LD is lower than the voltage of the seven-layer EBLs LD, the output power of the two is approximately the same, so the five-layer EBLs is the best choice for comprehensive structure analysis as the epitaxial structure can be grown more easily on it.
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