Home > Archive>Volume 15, Issue 3, 2019 >170-173. DOI:https://doi.org/10.1007/s11801-019-8154-x
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Silicon carbide and graphene based UV-IR dual-color detector
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1. Changchun University of Science and Technology, Changchun 130022, China;2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;3. Funsom & Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou University, Suzhou 215123, China

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    Abstract:

    An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208—356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016—1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μm is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage.

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ZENG Chun-hong, LIN Wen-kui, SUN Yu-hua, CUI Qi, ZHANG Xuan, LI Shao-juan, ZHANG Bao-shun, KONG Mei. Silicon carbide and graphene based UV-IR dual-color detector[J]. Optoelectronics Letters,2019,15(3):170-173

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History
  • Received:September 26,2018
  • Revised:November 22,2018
  • Online: May 01,2020
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