Optical properties of an Er3+-doped phosphate glass waveguide formed by single-energy H+ ion implantation
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1. College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;2. School of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China;3. State Key Laboratory of Transient Optics and Photonics, Xi′an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi′an 710119, China

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    Abstract:

    In this work, we report the fabrication of an optical waveguide by single-energy H+ ion implantation in the Er3+-doped phosphate glass. The ion implantation conditions are with energy of 0.4 MeV and a fluence of 8.0×1016 ions/cm2. The dark mode spectrum of the waveguide structure was measured by the prism coupling experiment. The refractive index change along with the penetration depth was fitted by using the reflectivity calculation method (RCM). Finally, the calculated near-field light intensity distribution shows superior waveguide properties, which demonstrates its promising potentials for compact optical integrated devices.

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CHEN Jing-yi, YAN Sen, ZHENG Rui-lin, ZHANG Liao-lin, GUO Hai-tao, LIU Chun-xiao. Optical properties of an Er3+-doped phosphate glass waveguide formed by single-energy H+ ion implantation[J]. Optoelectronics Letters,2019,15(2):104-107

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History
  • Received:June 20,2018
  • Revised:August 21,2018
  • Adopted:
  • Online: April 03,2019
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