Home > Archive>Volume 14, Issue 5, 2018 >342-345. DOI:https://doi.org/10.1007/s11801-018-8037-6
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1 550 nm long-wavelength vertical-cavity surface emitting lasers
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1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China ;2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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    Abstract:

    A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabricated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1-x-y)As/InP, and 6 strain compensated AlxGayIn(1-x-y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricating 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW operation at room temperature.

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LIU Li-jie, WU Yuan-da, WANG Yue, AN Jun-ming, HU Xiong-wei.1 550 nm long-wavelength vertical-cavity surface emitting lasers[J]. Optoelectronics Letters,2018,14(5):342-345

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  • Received:March 14,2018
  • Revised:April 20,2018
  • Online: March 26,2019
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