LIU Li-jie
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China 2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaWU Yuan-da
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China 2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaWANG Yue
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China 2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaAN Jun-ming
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China 2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaHU Xiong-wei
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China 2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083, China ;2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
LIU Li-jie, WU Yuan-da, WANG Yue, AN Jun-ming, HU Xiong-wei.1 550 nm long-wavelength vertical-cavity surface emitting lasers[J]. Optoelectronics Letters,2018,14(5):342-345
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