Structure and optoelectrical properties of transparent conductive MGZO films deposited by magnetron sputtering

Abstract:

The transparent conductive Mg-Ga co-doped ZnO (MGZO) films were prepared by radio-frequency (RF) magnetron sputtering. The influence of substrate temperature on the structural and optoelectrical properties of the films is studied. The results show that all the films possess a preferential orientation along the (002) plane. With the increase of substrate temperature, the structure and optoelectrical properties of the films can be changed. When substrate temperature is 300 °C, the deposited film exhibits the best crystalline quality and optoelectrical properties, with the minimum micro strain of 1.09´10-3, the highest average visible transmittance of 82.42%, the lowest resistivity of 1.62×10-3 W∙cm and the highest figure of merit of 3.18×103 W-1∙cm-1. The optical bandgaps of the films are observed to be in the range of 3.342—3.545 eV. The refractive index dispersion curves obey the Sellmeier’s dispersion model. #$TABThis work has been supported by the National Natural Science Foundation of China (No.11504436), and the Fundamental Research Funds for the Central Universities (Nos.CZP17002 and CZW14019).#$TABE-mail:[e-mail]