Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device
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1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;2. Semiconductor Manufacturing North China (Beijing) Corporation, Beijing 100176, China;3. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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    Abstract:

    This paper describes a novel finite element thermal analysis model for an AlGaInP-LED micro-array device. We also conduct a transient analysis for the internal temperature field distribution of a 5×5 array device when a 3×3 unit is driven by pulse current. In addition, for broader applications, a simplified thermal analysis model is introduced and its accuracy is verified. The internal temperature field distribution of 100×100 units is calculated using the simplified model. The temperature at the device center reaches 360.6 °C after 1.5 s. In order to solve the heat dissipation problem of the device, an optimized heat dissipation structure is designed, and the effects of the number and size of the heat dissipation fins on the thermal characteristics of the device are analyzed. This work has been supported by the Young Scientists Fund of the National Natural Science Foundation of China (No.61204055). E-mail:gaofl@jlu.edu.cn 

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TIAN Chao, GUO Shu-xu, LIANG Jing-qiu, LIANG Zhong-zhu, GAO Feng-li. Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device[J]. Optoelectronics Letters,2017,13(4):282-286

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History
  • Received:March 01,2017
  • Revised:May 12,2017
  • Adopted:
  • Online: September 29,2017
  • Published: