LI Kai-li
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, ChinaZHANG Jia-shun
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaAN Jun-ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, ChinaLI Jian-guang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWANG Liang-liang
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWANG Yue
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWU Yuan-da
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, ChinaYIN Xiao-jie
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaHU Xiong-wei
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China1.State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
LI Kai-li, ZHANG Jia-shun, AN Jun-ming, LI Jian-guang, WANG Liang-liang, WANG Yue, WU Yuan-da, YIN Xiao-jie, HU Xiong-wei. Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides[J]. Optoelectronics Letters,2017,13(4):241-244
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