Home > Archive>Volume 13, Issue 4, 2017 >241-244. DOI:10.1007/s11801-017-7076-8
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Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides
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1.State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China

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    Abstract:

    A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of −13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon-on-insulator (SOI) substrate. This work has been supported by the National Key Research and Development Program of China (No.2016YFB0402504), and the National Natural Science Foundation of China (Nos.61435013 and 61405188). E-mail:zhangjiashun@semi.ac.cn

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LI Kai-li, ZHANG Jia-shun, AN Jun-ming, LI Jian-guang, WANG Liang-liang, WANG Yue, WU Yuan-da, YIN Xiao-jie, HU Xiong-wei. Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides[J]. Optoelectronics Letters,2017,13(4):241-244

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History
  • Received:April 07,2017
  • Revised:May 05,2017
  • Online: September 29,2017
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