Effects of Mg doping content and annealing temperature on the structural properties of Zn1-xMgxO thin films prepared by radio-frequency magnetron sputtering
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1. School of Electrical and Photoelectronic Engineering, Changzhou Institute of Technology, Changzhou 213002, China;2. National Laboratory of Physical Science at Micro Scale, University of Science and Technology of China, Hefei 230026, China

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    Abstract:

    The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn1-xMgxO thin films. Here, using radio-frequency magnetron sputtering method, we prepared Zn1-xMgxO thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction (XRD) and scanning electron microscope (SEM), the crystalline structure and morphology of Zn1-xMgxO thin films with different x values are investigated. The crystalline structure of Zn1-xMgxO thin film is single phase with x<0.3, while there is phase separation phenomenon with x>0.3, and hexagonal and cubic structures will coexist in Zn1-xMgxO thin films with higher x values. Especially with lower x values, a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn1-xMgxO thin film. The crystalline quality has been improved and the inner stress has been released, after the Zn1-xMgxO thin films were annealed at 600 °C in vacuum condition.

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DU Wen-han, YANG Jing-jing, ZHAO Yu, XIONG Chao. Effects of Mg doping content and annealing temperature on the structural properties of Zn1-xMgxO thin films prepared by radio-frequency magnetron sputtering[J]. Optoelectronics Letters,2017,13(1):42-44

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History
  • Received:September 23,2016
  • Revised:October 10,2016
  • Online: January 11,2017
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