Home > Archive>Volume 12, Issue 6, 2016 >441-445. DOI:10.1007/s11801-016-6190-3
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Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer
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1. Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University, Changchun 130025, China;;2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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    Abstract:

    Microstructure and misfit dislocation behavior in InxGa1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In0.82Ga0.18As/InP heterostructure, the InxGa1-xAs buffer layer was grown. The residual strain of the In0.82Ga0.18As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium (In) content In0.82Ga0.82As epitaxial layer has significant influence on the carrier concentration.

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WEI Qiu-lin, GUO Zuo-xing, ZHAO Lei, ZHAO Liang, YUAN De-zeng, MIAO Guo-qing, XIA Mao-sheng. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer[J]. Optoelectronics Letters,2016,12(6):441-445

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  • Received:September 05,2016
  • Online: November 27,2016
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