Home > Archive>Volume 12, Issue 6, 2016 >430-432. DOI:10.1007/s11801-016-6191-2
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Fabrication of narrow pulse passively Q-switched self- stimulated Raman laser with c-cut Nd:GdVO4
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1. Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China;;2. Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China

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    Abstract:

    Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.

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SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched self- stimulated Raman laser with c-cut Nd:GdVO4[J]. Optoelectronics Letters,2016,12(6):430-432

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History
  • Received:September 06,2016
  • Revised:October 02,2016
  • Online: November 27,2016
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