Home > Archive>Volume 12, Issue 4, 2016 >280-284. DOI:10.1007/s11801-016-6025-2
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Microstructure and optoelectronic properties of gallium- titanium-zinc oxide thin films deposited by magnetron sputtering
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1. College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China;;2. Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, China;;3. Center of Experiment Teaching, South-Central University for Nationalities, Wuhan 430074, China

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    Abstract:

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

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CHEN Shou-bu, LU Zhou, ZHONG Zhi-you, LONG Hao, GU Jin-hua, LONG Lu. Microstructure and optoelectronic properties of gallium- titanium-zinc oxide thin films deposited by magnetron sputtering[J]. Optoelectronics Letters,2016,12(4):280-284

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History
  • Received:January 25,2016
  • Revised:March 21,2016
  • Online: September 06,2016
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