XU Ming-sheng
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, ChinaZHANG Heng
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, ChinaZHOU Quan-bin
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, ChinaWANG Hong
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China1. Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China;;2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
XU Ming-sheng, ZHANG Heng, ZHOU Quan-bin, WANG Hong. Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes[J]. Optoelectronics Letters,2016,12(4):249-252
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