Home > Archive>Volume 12, Issue 3, 2016 >192-194. DOI:10.1007/s11801-016-5272-6
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TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer
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Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China

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    Abstract:

    In order to improve the quality of detector, InxGa1-xAs (x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in InxGa1-xAs (x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

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ZHAO Liang, GUO Zuo-xing, YUAN De-zeng, WEI Qiu-lin, ZHAO Lei. TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters,2016,12(3):192-194

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  • Received:December 24,2015
  • Online: April 29,2016
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