SANG Wei-hua
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, ChinaLIN Lu
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, ChinaWANG Long
School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, ChinaMIN Jia-hua
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, ChinaZHU Jian-jun
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWANG Min-rui
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;;2. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, China;;3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;;4. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
SANG Wei-hua, LIN Lu, WANG Long, MIN Jia-hua, ZHU Jian-jun, WANG Min-rui. GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography[J]. Optoelectronics Letters,2016,12(3):178-181
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