GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography
CSTR:
Author:
Affiliation:

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;;2. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, China;;3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;;4. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

  • Article
  • | |
  • Metrics
  • |
  • Reference [19]
  • |
  • Related [20]
  • | | |
  • Comments
    Abstract:

    Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. Gallium nitride (GaN)-based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of GaN epilayer and light extraction efficiency of LEDs at the same time.

    Reference
    [1] Fujii T., Gao Y., Sharma R., Hu E. L., DenBaars S. P. and Nakamura S., Applied Physics Letters 84, 855 (2004).
    [2] Nakada N., Nakaji M., Ishikawa H., Egawa T., Umeno M. and Jimbo T., Applied Physics Letters 76, 1804 (2000).
    [3] Guo Hao, Chen Hongjun, Zhang Xiong, Zhang Peiyuan, Liu Jianjun, Liu Honggang and Cui Yiping, Optical Engineering 52, 63402 (2013).
    [4] Kim Ja-Yeon, Kwon Min-Ki, Park Seong-Ju, Kim Sang Hoon and Lee Ki-Dong, Applied Physics Letters 96, 251103 (2010).
    [5] Tadatomo Kazuyuki, Okagawa Hiroaki, Ohuchi Youichiro, Tsunekawa Takashi, Imada Yoshiyuki, Kato Munehiro and Taguchi Tsunemasa, Japanese Journal of Applied Physics 40, L583 (2001).
    [6] P. C. Tsai, Ricky W. Chuang, Y. K. Su, Journal of Lightwave Technology 25, 591 (2007).
    [7] Jae-Hoon Lee, J. T. Oh, Y. C. Kim and Jung-Hee Lee, IEEE Photonics Technology Letters 220, 1563 (2008).
    [8] Yamada Motokazu, Mitani Tomotsugu, Narukawa Yukio, Shioji Shuji, Niki Isamu, Sonobe Shinya, Deguchi Kouichiro, Sano Masahiko and Mukai Takashi, Japanese Journal of Applied Physics 41, L1431 (2002).
    [9] Huang H. W., Lin C. H., Huang J. K., Lee K. Y., Lin C. F., Yu C. C., Tsai J. Y., Hsueh R., Kuo H. C. and Wang S. C., Materials Science and Engineering:B 164, 76 (2009).
    [10] Xia D., Ku Z., Lee S. C. and Brueck S. R., Advanced Materials 23, 147 (2011).
    [11] Zhang Yonghui, Wei Tongbo, Wang Junxi, Fan Chao, Chen Yu, Hu Qiang and Li Jinmin, Journal of Crystal Growth 394, 7 (2014).
    [12] Cho Joong-Yeon and Lee Heon, Journal of Photopolymer Science and Technology 28, 5 (2015).
    [13] Ignacio Martín-Fabiani, Stephen Riedel, Daniel R. Rueda, Jan Siegel, Johannes Boneberg, Tiberio A. Ezquerra and Nogales Aurora, American Chemical Society 30, 8973 (2014).
    [14] Lu C. and Lipson R. H., Laser & Photonics Reviews 4, 568 (2009).
    [15] Xuan Ming-dong, Dai Long-gui, Jia Hai-qiang and Chen Hong, Optoelectronics Letters 10, 51 (2014).
    [16] Liu Guoqiang, Zhang Jin and Zhou Chongxi, High Power Laser and Particle Beams 23, (2011). (in Chinese)
    [17] Chen H., Zhang Q. and Chou S. Y., Nanotechnology 26, 085302 (2015).
    [18] Chen Gui-chu and Fan Guang-han, Optoelectronics Letters 10, 250 (2014).
    [19] Mei-TanWang, Kuan-Yung Liao and Li Yun-Li, IEEE Photonics Technology Letters 23, 962 (2011).
    Cited by
    Comments
    Comments
    分享到微博
    Submit
Get Citation

SANG Wei-hua, LIN Lu, WANG Long, MIN Jia-hua, ZHU Jian-jun, WANG Min-rui. GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography[J]. Optoelectronics Letters,2016,12(3):178-181

Copy
Share
Article Metrics
  • Abstract:4681
  • PDF: 0
  • HTML: 0
  • Cited by: 0
History
  • Received:December 09,2015
  • Revised:March 14,2016
  • Online: April 29,2016
Article QR Code