GAO Yu-zhu
College of Electronics and Information Engineering, Tongji University, Shanghai 201804, ChinaGONG Xiu-ying
College of Electronics and Information Engineering, Tongji University, Shanghai 201804, ChinaZHOU Ran
College of Electronics and Information Engineering, Tongji University, Shanghai 201804, ChinaLI Ji-jun
Huaxing Infrared Device Company, Xi’an 712099, ChinaFENG Yan-bin
Huaxing Infrared Device Company, Xi’an 712099, ChinaTakamitsu Makino
Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, JapanHirofumi Kan
Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, Japan1. College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China;;2. Huaxing Infrared Device Company, Xi’an 712099, China;;3. Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434-8601, Japan
This work has been supported by the Fundamental Research Funds for the Central Universities in China.
GAO Yu-zhu, GONG Xiu-ying, ZHOU Ran, LI Ji-jun, FENG Yan-bin, Takamitsu Makino, Hirofumi Kan. Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave- length extended to 11.5 μm[J]. Optoelectronics Letters,2015,11(5):352-355
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