Home > Archive>Volume 11, Issue 3, 2015 >187-190. DOI:10.1007/s11801-015-5025-y
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High efficiency organic light-emitting diodes using CuOx/ Cu dual buffer layers
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1. National Teaching Center for Experimental Physic, Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, China;;2. Key Laboratory of Luminescence and Optical Information, Ministry of Education of China, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

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This work has been supported by the National Natural Science Foundation of China (No.61274063).

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    Abstract:

    An organic light-emitting diode (OLED) device with high efficiency and brightness is fabricated by inserting CuOx/Cu dual inorganic buffer layers between indium-tin-oxide (ITO) and hole-transport layer (HTL). The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOx/Cu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m2, which is almost twice as high as that of the compared device.

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CHEN Zheng, DENG Zhen-bo. High efficiency organic light-emitting diodes using CuOx/ Cu dual buffer layers[J]. Optoelectronics Letters,2015,11(3):187-190

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  • Received:February 04,2015
  • Online: November 26,2015
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