- ZHANG Yu-ping 1
ZHANG Yu-ping
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China
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Search for this author on this site - LIU Ya-qing 1,2
LIU Ya-qing
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China;College of Electronic Information Engineering, Tianjin University of Technology, Tianjin 300384, China
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Search for this author on this site - CAO Yan-yan 1
CAO Yan-yan
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China
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Search for this author on this site - LI Tong-tong 1
LI Tong-tong
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China
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Search for this author on this site - Lü Huan-huan 1
Lü Huan-huan
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China
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Search for this author on this site - HUANG Xiao-yan 1
HUANG Xiao-yan
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China
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Search for this author on this site - REN Guang-jun 2
REN Guang-jun
College of Electronic Information Engineering, Tianjin University of Technology, Tianjin 300384, China
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Search for this author on this site - ZHANG Hui-yun 1
ZHANG Hui-yun
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China
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1. Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China;;2. College of Electronic Information Engineering, Tianjin University of Technology, Tianjin 300384, China
This work has been supported by the National Natural Science Foundation of China (No.61001018), the Natural Science Foundation of Shandong Province of China (No.ZR2012FM011), the Project of Shandong Province Higher Educational Science and Technology Program (No.J11LG20), the Qingdao Science & Technology Project (No.11-2-4-4-(8)-jch), the Qingdao Economic & Technical Development Zone Science & Technology Project (No.2013-1-64), and the Shandong University of Science and Technology Foundation in China (No.YC140108).
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We propose a surface plasmon (SP) structure in electrically pumped multiple graphene-layer (MGL), and calculate the functions of dynamic conductivity and absorption coefficient. Meanwhile, the dependences of absorption coefficient on different factors are simulated. SP can get gain when absorption coefficient is negative, and the SP gain can be enhanced by lowering temperature, applying high bias voltage and choosing the graphene with proper layer number and long momentum relaxation time. The study on SP gain is hopeful to be used in amplifiers and graphene-based plasmon devices.
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ZHANG Yu-ping, LIU Ya-qing, CAO Yan-yan, LI Tong-tong, Lü Huan-huan, HUANG Xiao-yan, REN Guang-jun, ZHANG Hui-yun. Gain enhancement of terahertz surface plasmon in electrically pumped multilayer graphene[J]. Optoelectronics Letters,2015,11(1):49-52
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- Received:October 30,2014
- Online: November 26,2015
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