Home > Archive>Volume 11, Issue 1, 2015 >10-12. DOI:10.1007/s11801-015-4181-4
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Nano-photonic crystal formation on highly-doped n-type silicon
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1. College of Information Science and Technology, Shihezi University, Shihezi 832003, China;;2. College of Information Science and Engineering, Xinjiang University, Urumqi 830046, China

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This work has been supported by the National Natural Science Foundation of China (No.61265009), the Excellent Youth Foundation of Shihezi University (No.2012ZRKXYQ-YD20), and the Doctoral Research Foundation of Shihezi University (No.RCZX201327).

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    Abstract:

    We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon (PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model (CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon.

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ZHONG Fu-ru, JIA Zhen-hong. Nano-photonic crystal formation on highly-doped n-type silicon[J]. Optoelectronics Letters,2015,11(1):10-12

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  • Received:October 04,2014
  • Online: November 26,2015
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