- Xia Liu
Xia Liu
Department of Physics and Electronic Science, Weifang University, Weifang, 261061, China
;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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Search for this author on this site - Lian-zhen Cao
Lian-zhen Cao
Department of Physics and Electronic Science, Weifang University, Weifang, 261061, China
;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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Search for this author on this site - Hang Song
Hang Song
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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Search for this author on this site - Hong Jiang
Hong Jiang
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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This work has been supported by the National Natural Science Foundation of China （No. 11174224）, the Science and Technology Development Program of Shandong Province （No.2013YD01016）, and the Higher School Science and Technology Program of Shandong Province （No.J13LJ54）.
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InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4 epilayers.
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Xia Liu, Lian-zhen Cao, Hang Song, Hong Jiang. Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP[J]. Optoelectronics Letters,2014,10(4):269-272
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- Online: October 06,2015
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