Fabrication of high-quality ZnS buffer and its application in Cd-free CIGS solar cells
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Abstract:
This paper provides the fabrication of Cd-free Cu(In,Ga)Se2 (CIGS) solar cells on soda-lime glass substrates. A high quality ZnS buffer layer is grown by chemical bath deposition (CBD) process with ZnSO4-NH3-SC (NH2)2 aqueous solution system. The X-ray diffraction (XRD) result shows that the as-deposited ZnS film has cubic (111) and (220) diffraction peaks. Scanning electron microscope (SEM) images indicate that the ZnS film has a dense and compact surface with good crystalline quality. Transmission measurement shows that the optical transmittance is about 90% when the wavelength is beyond 500 nm. The bandgap (Eg) value of the as-deposited ZnS film is estimated to be 3.54 eV. Finally, a competitive efficiency of 11.06% is demonstrated for the Cd-free CIGS solar cells with ZnS buffer layer after light soaking.
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This work has been supported by the Fundamental Research Funds for the Central Universities (No.65011991), and the Specialized Research Fund for the Doctoral Program of Higher Education (No.BE033511).The authors express their sincere appreciation to Dr. Liu Qi for her help with kind discussion.