Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes
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Abstract:
The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly.
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This work has been supported by the National Natural Science Foundation of China （No.61176043）.
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