Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

Abstract:

The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly.