- Tian-wei Li
Tian-wei Li
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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Search for this author on this site - Jian-jun Zhang
Jian-jun Zhang
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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Search for this author on this site - Yu Cao
Yu Cao
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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Search for this author on this site - Zhen-hua Huang
Zhen-hua Huang
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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Search for this author on this site - Jun Ma
Jun Ma
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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Search for this author on this site - Jian Ni
Jian Ni
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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Search for this author on this site - Ying Zhao
Ying Zhao
Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic, Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin, 300071, China
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This work has been supported by the National Basic Research Program of China （Nos.2011CBA00705, 2011CBA00706 and 2011CBA00707）, the National Natural Science Foundation of China （No.61377031）, the Natural Science Foundation of Tianjin （No.12JCQNJC01000） and the Fundamental Research Funds for the Central Universities.
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Hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously. Additionally, the microstructural properties of the μc-SiGe:H films are also studied. By combining Raman, Fourier transform infrared (FTIR) and X-ray fluoroscopy (XRF) measurements, it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.
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Tian-wei Li, Jian-jun Zhang, Yu Cao, Zhen-hua Huang, Jun Ma, Jian Ni, Ying Zhao. Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power[J]. Optoelectronics Letters,2014,10(3):202-205
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- Online: October 06,2015
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