Luminescent high temperature sensor based on the CdSe/ZnS quantum dot thin film
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Abstract:
A high temperature sensor based on the multi-parameter temperature dependent characteristic of photoluminescence (PL) of quantum dot (QD) thin film is demonstrated by depositing the CdSe/ZnS core/shell QDs on the SiO2 glass substrates. The variations of the intensity, the peak wavelength and the full width at half maximum (FWHM) of PL spectra with temperature are studied experimentally and theoretically. The results indicate that the peak wavelength of the PL spectra changes linearly with temperature, while the PL intensity and FWHM vary exponentially for the temperature range from 30 °C to 180 °C. Using the obtained temperature dependent optical parameters, the resolution of the designed sensor can reach 0.1 nm/°C.
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This work has been supported by the National Natural Science Foundation of China （No.11226148）, the Scientific Research Foundation of Zhejiang Province （No.LY12F05006）, the Foundation of Zhejiang Educational Committee （No.Y201121906）, and the Scientific Research Foundation of Zhejiang University of Technology （No. 109004129）.
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