Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD
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O484.1

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    Abstract:

    We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH...

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HE Bao-hua, YANG Shi-e, CHEN Yong-sheng, LU Jing-xiao. Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD[J]. Optoelectronics Letters,2011,7(3):198-201

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