Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

Abstract:

Al and F co-doped ZnO (ZnO:(Al, F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents. The structural, electrical and optical properties of the deposited films are sensitive to the F doping content. The X-ray analysis shows that the films are c-axis orientated along the (002) plane with the grain size ranging from 9 nm to 13 nm. Micrographs obtained by the scanning electron microscope (SEM) show a uniform surface. The best films obtained have a resistivity of 2.16×10⁻³ù cm, while the high optical transmission is 92.0% at the F content of 2.46 wt.%.