Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector
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Abstract:
The transient photoresponse of a backside-illuminated InP/InGaAs uni-traveling carrier photodetector(UTC-PD) is simulated by a 2D drift-diffusion approach utilizing a commercial numerical device simulator(ATLAS).The effects of the epitaxial layer structure and device biasing are taken into account.The simulation results indicate that the absorption region has a critical effect on the photoresponse pulse,and an optimized epitaxial layer structure is given to achieve a fast response while maintaining a reason...
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TP21
