Influence of temperature on Auger recombination lifetime in In1?xGaxAs materials

Abstract:

The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm-3 and 1018 cm-3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination life...