Effect of carrier recombination mechanisms on the open circuit voltage of n+-p GaInAsSb thermophotovoltaic cells
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Abstract:
By analyzing the main recombination mechanisms in GaInAsSb materials, the dependences of the dark current density and open circuit voltage in n+-p GaInAsSb thermophotovoltaic cells on the recombination parameters, carrier concentration and cell thickness are calculated. The results show that the dark current mainly comes from p-region, and it is related with the surface and Auger recombinations in low and high carrier concentration ranges, respectively. The surface and Auger recombinations can be suppressed...
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Clc Number:
TM914
