Performance of pentacene-based organic field effect transistors using different polymer gate dielectrics

Abstract:

Pentacene-based organic field effect transistors (OFETs) are fabricated using poly(methyl methacrylate) (PMMA) and polyimide (PI) as gate dielectrics, respectively. The fabricated OFETs exhibit reasonable device characteristics. The field-effect mobility, threshold voltage, and on/off current radio are determined to be 3.214 × 10⁻² cm²/Vs, −28 V, and 1 ×10³ respectively for OFETs with PMMA as gate dielectrics, and 7.306×10⁻³cm²/Vs, −21 V, and 2 ×10² for OFETs with PI. Furthermore, the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.