Influence of strain on hydrogenic impurity states in a GaN/ Al_xGa_(1-x)N quantum dot
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Abstract:
Within the effective-mass approximation, we calculated the influence of sawn on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic donor impurity decreases when the Al content is increasing. For dot height L < 2 nm, the change of the binding energy is very smafl with the Al content variety.
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Clc Number:
O471.1
