Passive mode locked diode-pumped Nd:GdYVO4 laser with a GaAs absor ber

Abstract:

A passively Q-switched mode-locked Nd:GdYVO4 laser is successfully demonstrated by using a piece of GaAs crystalgrown at low temperature as the passively saturated absorber and the output coupler. Fundamental properties of the Nd:GdYVO4 laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when theincident pumping power is 10 W, which corresponds to an optical-optical coversion efficiency of 35%. The thresholdpower for the Q-switching mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by usingGaAs when the incident pumping power is 10 W, mode-locked pulse train with a repetition rate of -113 MHz is achieved.At the incident laser pumping power of 7 W, the modulation depth is 100%.