Laser lift-off technique and the re-utilization of GaN-based LED films grown on sapphire substrate

Abstract:

A thin GaN LED film, grown on 2-inch-diameter sapphire substrates, is separated by laser lift-off. Atom force microscopy (AFM) and the double-crystal X-ray diffraction (XRD) have been employed to characterize the performance of GaN before and after the lift-off process. It is demonstrated that the separation and transfer processes do not alter the crystal quality of the GaN films obviously. InGaN/GaN multi-quantum-wells (MQW's) structure is grown on the separated sapphire substrate later and is compared with that grown on the conventional substrate under the same condition by using PL and XRD spectrum.

Key words:;KeywordHeading";>CLC numbers O484.1