Monte Carlo simulation for the sputtering yield of Si3N4 thin film milled by focused ion beams

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Monte Carlo simulation for the sputtering yield of Si3N4 thin film milled by focused ion beams
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                        TAN Yong-wen,SONG Yu-min,ZHOU Peng,WANG Cheng-yu,YANG HaiTAN Yong-wen,SONG Yu-min,ZHOU Peng,WANG Cheng-yu,YANG Hai

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Abstract:

The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium (Ga) and Arsenic (As) ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82°and 84°.

Key words:thin film;sputtering yield;simulation;Monte Carlo method;abnormal;range;ions;Arsenic;angle;number;Gallium;energy;different;parameters

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TAN Yong-wen, SONG Yu-min, ZHOU Peng, WANG Cheng-yu, YANG Hai. Monte Carlo simulation for the sputtering yield of Si3N4 thin film milled by focused ion beams[J]. Optoelectronics Letters,2008,4(4):

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