Crystallization of μc-Si on plastic substrate by using a pulsed double-frequency YAG laser

Abstract:

Thin film transistors (TFTs) of microcrystalline silicon (μc-Si) can provide higher mobility and stability than that of a-Siand better uniformity than that of poly-Si TFTs,and it would be more suitable to be applied to larger-area AMOLEDs.By using 2ωYAG laser annealing,crystalline μc-Si thin film on plastic substrate has been investigated and the proper laser energy needed for crystallization has been indicated.It has been found that the dehydrogenation process at 300-450℃ for a few of hours could be omitted by decreasing the H content in the crystallization precursor,which is suitable for laser crystallization on plastic substrates.The crystalline volume fraction (Xc) and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy.By this method,the μc-Si on plastic substrate with Xc and grain size is respectively 85% (at the maximum) and 50 nm.

Key words:Crystallization;YAG laser;maximum;method;controlling;grain size;crystalline volume fraction;plastic substrate;substrates;decreasing;content;precursor;dehydrogenation;process;thin film;energy;crystallization;laser annealing;would;mobility