Properties of ITO:Zr films deposited by co-sputtering
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O484.1

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    Abstract:

    ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target.Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films.ITO:Zr films show bettex crystalline strucmfe and lower surface roughhess.Better optical-electrical properties of the films cam be achieved at low substrate temperature.The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films.The vadation in optical band gap can be explained on the basis of Burstin-Moss effect.

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Bo Zhang, Xiao-feng Xu, Xian-ping Dong, Jian-sheng Wu. Properties of ITO:Zr films deposited by co-sputtering[J]. Optoelectronics Letters,2008,4(2):137-139

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  • Received:September 26,2007
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