All-optical NOR gate based on injection-locking effect in a semiconductor laser
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TN929.11

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    Abstract:

    A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a result, the probe light into the laser can be switched between injection-locked and unlocked status, and its output power will be modulated. Theoretical analysis for this scheme is carried out by using a model to describe the dynamics of the injection-locked laser. By numerical simulation, the influence of laser bias current, laser length, injected signal power and signal frequency on the output performance of NOR logic gate is quantitatively analyzed.

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Liu-yan Han, Han-yi Zhang, Yi-li Guo. All-optical NOR gate based on injection-locking effect in a semiconductor laser[J]. Optoelectronics Letters,2008,4(1):33-37

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  • Received:September 23,2007
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