Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties
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Abstract:
The Indium Tin Oxide films have been prepared at different substrate-temperature on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10-1 Pa and a deposition rate of 10-2 nm/s. The best ITO films obtained cm2v-1s-1. The influence of the substrate-temperature on the structural, optical and electrical properties of the obtained films has been investigated.
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Clc Number:
O484.1
